The MOSFET power module is optimized for high-frequency switching operations, integrating a low RDS(on) device for minimized conduction losses. The design incorporates advanced thermal dissipation pathways and an isolated gate driver interface to ensure signal integrity and protection. With a high dielectric withstand rating between control and power stages, the module supports reliable operation in demanding converter topologies, including DC–DC, DC–AC, and AC–DC systems. Suitable for laboratory prototypes and industrial-grade hardware, it delivers high efficiency, electrical isolation, and operational stability under dynamic load conditions.
FQP45N15V2 – 150 V / 45 A, SUP50010EL-GE3 – 60 V / 150 A, SIHP100N60E-GE3 – 600 V / 30 A, FCPF11N60 – 600 V / 11 A, TK5R3E08QM,S1X – 80 V / 120 A, FDP090N10 – 100 V / 75 A, SUP57N20-33-E3 – 200 V / 57 A, IXFP34N65X3 – 650 V / 34 A, IXFP72N20X3 – 200 V / 72 A, STF16N65M5 – 650 V / 12 A, STP310N10F7 – 100 V / 180 A, FCPF099N65S3 – 650 V / 30 A, SIHP080N60E-GE3 – 600 V / 35 A, FCPF067N65S3 – 650 V / 44 A, and much more.
IRFP9240 – 200 V / 12 A, IRFP260N – 200 V / 50 A, IRFP250N – 200 V / 30 A, IRF244 – 250 V / 15 A, and much more.
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This product is intended for engineering, research, and industrial use. Users must ensure proper system-level protection and safe operating practices when working with high voltages and currents.