Half Bridge Drivers without DESAT

The half-bridge driver is an isolated dual-channel gate driver with 4A source and 6A sink peak current. It is designed to drive power MOSFETs, IGBTs, and SiC MOSFETs. The input side is isolated from the two output drivers by a 5.7 kV RMS reinforced isolation barrier. Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1500 VDC. The half-bridge driver is provided with programmable dead time (DT). The user can select the required DT. A disable pin shuts down both outputs simultaneously when it is set high, and allows normal operation when left open or grounded. As a fail-safe measure, primary-side logic failures force both outputs low. A wide input range makes the driver suitable for interfacing with both analog and digital controllers. All supply voltage pins have under-voltage lock-out (UVLO) protection. It includes a power indication LED for real-time system monitoring. It supports microcontroller-based disabled PWM input, which is triggered if any overcurrent fault is identified using external sensors.

Key Features

• Dual-channel isolated gate driver for half-bridge configurations

• Independent high-side and low-side gate drive outputs

• Supports high switching frequencies

• Optimized gate loop layout for low EMI and reduced ringing

• Compatible with 3.3 V / 5 V logic-level PWM inputs

• Designed for reliable operation in noisy power environments

• High peak source/sink current for fast and clean switching

• Galvanic isolation between control and power stages

• Wide operating voltage range for gate drive flexibility

• High common-mode transient immunity (CMTI) suitable for fast-switching devices

• Low propagation delay and excellent channel matching

• Compact, PCB-mounted module for easy system integration

• Designed for SiC MOSFETs, IGBTs, and MOSFETs